Galvanostatic Plating with a Single Additive Electrolyte for Bottom-Up Filling of Copper in Mesoscale TSVs

Process and Performance of Copper TSVs

The difference between the performance of TSVs manufactured using SF6/O2 plasma etching or a Bosch process is explored through simulations. The geometric ratio of the sample TSV is approximately 5μm:58μm. The electrical performance of the devices is explored through capacitance and resistance extraction, while the reliability is analyzed using thermo-mechanical and electromigration simulations ...

Filling through Holes and Blind Micro Vias with Copper Using Reverse Pulse Plating and Insoluble Anodes

This paper presents systematic investigations on complete through hole filling for cores using a Cu electroplating process as an alternative to the common paste plugging process [1]. This technology is targeting at both HDI production and also at the packaging level [2]. This electro plating process consists of two steps, a first process to merge both centers of the through hole walls (X-platin...

Process and Reliability of SF6/O2 Plasma Etched Copper TSVs

The formation of a TSV for three-dimensional interconnects using SF6/O2 plasma is explored. Adjusting the O2 gas concentration to 45 sccm, while the SF6 concentration is set to 35 sccm, produced the best combination of chemical and physical etching to provide sidewall angles of 88◦. Three TSV aspect ratios are etched (5/58, 10/100, and 20/100 μm) and subsequently analyzed using the finite eleme...

Prediction of Surface Tension in Single and Mixed Electrolyte Solutions

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